BSS138W SIPMOS(R) Small-Signal-Transistor Product Summary Features * N-channel * Enhancement mode V DS 60 V R DS(on),max 3.5 ID 0.28 A * Logic level * dv /dt rated * Pb-free lead-plating; RoHS compliant PG-SOT-323 * Qualified according to AEC Q101 * Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138W PG-SOT-323 SS BSS138W PG-SOT-323 H6327: 3000 / H6433: 10000 SS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 C 0.28 T A=70 C 0.22 1.12 Pulsed drain current I D,pulse T A=25 C Reverse diode dv /dt dv /dt I D=0.28 A, V DS=48 V, di /dt =200 A/s, T j,max=150 C Gate source voltage V GS 6 20 ESD class (JESD22-A114-HBM) Unit A kV/s V 0 (<250V) Power dissipation P tot Operating and storage temperature T j, T stg T A=25 C IEC climatic category; DIN IEC 68-1 Rev. 2.42 Value 0.50 W -55 ... 150 C 55/150/56 page 1 2011-07-12 BSS138W Parameter Values Symbol Conditions Unit min. typ. max. - - 250 60 - - Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 A Gate threshold voltage V GS(th) V GS=V DS, I D=26 A 0.6 1.0 1.4 Drain-source leakage current I D (off) V DS=60 V, V GS=0 V, T j=25 C - - 0.1 V DS=60 V, V GS=0 V, T j=150 C - - 5 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.03 A - 3 4.0 V GS=4.5 V, I D=0.16 A - 3.2 6 V GS=10 V, I D=0.2 A - 2.1 3.5 |V DS|>2|I D|R DS(on)max, I D=0.22 A 0.12 0.23 - Transconductance Rev. 2.42 g fs page 2 S 2011-07-12 BSS138W Parameter Values Symbol Conditions Unit min. typ. max. - 32 43 - 7.2 10 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.8 4.2 Turn-on delay time t d(on) - 2.2 3.3 Rise time tr - 3.0 4.5 Turn-off delay time t d(off) - 6.7 10 Fall time tf - 8.2 12 Gate to source charge Q gs - 0.10 0.13 Gate to drain charge Q gd - 0.3 0.4 Gate charge total Qg - 1.0 1.5 Gate plateau voltage V plateau - 3.2 - V - - 0.28 A - - 1.12 - 0.85 1.2 V - 8.3 12.4 ns - 3.3 5 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.2 A, R G=6 pF ns Gate Charge Characteristics V DD=48 V, I D=0.2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.42 T A=25 C V GS=0 V, I F=0.28 A, T j=25 C V R=30 V, I F=0.28 A, di F/dt =100 A/s page 3 2011-07-12 BSS138W 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS10 V 0.3 0.5 0.25 0.4 0.3 I D [A] P tot [W] 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0 40 80 120 160 0 40 80 T A [C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 10 160 T A [C] 0.5 102 10 s 0 0.2 100 s 0.1 0.05 Z thJA [K/W] I D [A] 1 ms 10 ms 10-1 100 ms 101 0.02 0.01 100 single pulse DC 10-2 10-1 10-2 10-3 1 10 100 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] V DS [V] Rev. 2.42 10-6 page 4 2011-07-12 BSS138W 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 0.6 10 V 10 V7 V5 2.9 V V 4.5 0.5 3.2 V 3.5 V 4V 8 V4 R DS(on) [] I D [A] 0.4 V 3.5 0.3 V 3.2 6 4.5 V 4 5V 0.2 V 2.9 7V 10 V 2 0.1 0 0 0 1 2 3 4 0 5 0.1 V DS [V] 0.2 0.3 0.4 0.5 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 0.6 0.4 0.35 0.5 0.3 0.4 g fs [S] I D [A] 0.25 0.3 0.2 0.15 0.2 0.1 0.1 0.05 0 0 0 1 2 3 4 5 Rev. 2.42 0.00 0.10 0.20 0.30 0.40 I D [A] V GS [V] page 5 2011-07-12 BSS138W 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.2 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=26 A parameter: I D 8 2 1.6 6 V GS(th) [V] R DS(on) [] %98 %98 4 1.2 typ 0.8 typ 2 %2 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 100 102 150 C, 98% 25 C 25 C, 98% 150 C Ciss I F [A] C [pF] 10-1 101 Coss 10-2 Crss 100 10-3 0 10 20 30 Rev. 2.42 0 0.4 0.8 1.2 1.6 2 V SD [V] V DS [V] page 6 2011-07-12 BSS138W 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.2 A pulsed V BR(DSS)=f(T j); I D=250 A parameter: V DD 70 12 30 V 10 65 V BR(DSS) [V] V GS [V] 8 48 V 12 V 6 60 4 55 2 50 0 0 0.2 0.4 0.6 0.8 1 Q gate [nC] Rev. 2.42 -60 -20 20 60 100 140 180 T j [C] page 7 2011-07-12 BSS138W Package Outline: Footprint: Rev. 2.42 Packaging: page 8 2011-07-12 BSS138W Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.42 page 9 2011-07-12